Small reverse current: IR < 5 µA (at VR = 30 V)
0.80±0.05
0.60+0.05.
0.03 0.80+0.05.
0.03 1
(0.60)
0.12+0.05.
0.02
(0.80)
(0.60)
0.01±0.01
5˚.
Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current.
Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IF.
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Schottky Barrier Diodes (SBD)
MA2SD32
Silicon epitaxial planar type
Unit: mm
For super high speed switching ■ Features
• IF(AV) = 200 mA rectification is possible. • Small reverse current: IR < 5 µA (at VR = 30 V)
0.80±0.05
0.60+0.05 –0.03 0.80+0.05 –0.03 1
(0.60)
0.12+0.05 –0.02
(0.80)
(0.60)
0.01±0.01
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Repetitive peak reverse voltage Forward current (Average) Peak forward current Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 125 −55 to +125 Unit V V
5˚
2 0.30±0.05
0+0 –0.05
0.01±0.
MA2SD032 Datasheet
