Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting
0.80
0.80 ± 0.05
Unit : mm
2
1
0.60
0.60
0.12.
0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current.
Peak forward current Average forward current Junction temperature Sto.
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Schottky Barrier Diodes (SBD)
MA2SD10
Silicon epitaxial planar type
0.30 ± 0.05
For super-high speed switching circuit I Features
• • • • Sealed in the super small SS-mini type 2-pin package Allowing to rectify under (IF(AV) = 200 mA) condition Low forward rise voltage VF Allowing high-density mounting
0.80
0.80 ± 0.05
Unit : mm
2
1
0.60
0.60
0.12 − 0.02
+ 0.05
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Non-repetitive peak forward surge current* Peak forward current Average forward current Junction temperature Storage temperature Symbol VR VRRM IFSM IFM IF(AV) Tj Tstg Rating 20 20 1 300 200 125 −55 to + 125 Unit V V A mA mA °C °C
1.20 − 0.03
+ 0.05
1.60 ± 0.
MA2SD10 Datasheet
