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MA2SV04 Datasheet Variable Capacitance Diodes

Manufacturer: Panasonic

Overview: Variable Capacitance Diodes MA2SV04 Silicon epitaxial planar type Unit : mm For VCO 0.15 min. 0.15 min. • Good linearity and large capacitance-ratio in CD  VR relation • Small series resistance rD • SS-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 0.27 − 0.02 0.8 ± 0.1 + 0.

Key Features

  • 1.3 ± 0.1 1.7 ± 0.1 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150.
  • 55 to +150 Unit V °C °C 0.7 ± 0.1 1 : Anode 2 : Cathode SS-Mini Type Package (2-pin) Marking Symbol: 5 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Diode capacitance Series resistance.
  • Symbol IR CD(1V) CD(3V) rD VR = 5 V VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 3 V, f = 470 MHz 10.0 5.8 Conditions Min Typ Max 10 11.1 6.4 0.3.

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