Datasheet Summary
Band Switching Diodes
Silicon epitaxial planar type
Unit : mm
For band switching I Features
- Low forward dynamic resistance rf
- Less voltage dependence of diode capacitance CD
- Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
- 0.1
+ 0.2
INDICATES CATHODE
- 0.1 3.3 ± 0.2
- (3. 8 ± 0.2)
+ 0.2
5°
0 to 0.05
Reverse voltage (DC) Forward current (DC) Operating ambient temperature-
VR IF Topr Tstg
35 100
- 25 to +85
- 55 to +150
V mA °C °C
5°
- (
): WL type
Storage temperature
1 : Anode 2 : Cathode Mini Type Package (2-pin)
Note)
- : Maximum ambient temperature during operation
Marking Symbol: 4B
I...