Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current.
Junction temperature Storage temperature Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 100 100 300 1.5 125.
55 to +125 Unit V
5˚
2 0.55±0.1
0.45±0.1 0.16+0.1.
0.06
mA A °C °C
1: Anode 2: Cathode
Mini2-F1 Packa.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Schottky Barrier Diodes (SBD)
MA2YD17
Silicon epitaxial planar type
Unit: mm
For high frequency rectification ■ Features
1.6±0.1 1
0.80±0.05
0 to 0.1
2.6±0.1 3.5±0.1
• Reverse voltage VR = 100 V is guaranteed
5˚
■ Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage Maximum peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current * Junction temperature Storage temperature Symbol VR VRM IF(AV) IFSM Tj Tstg Rating 100 100 300 1.5 125 −55 to +125 Unit V
5˚
2 0.55±0.1
0.45±0.1 0.16+0.1 –0.