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Variable Capacitance Diodes
MA2Z331
Silicon epitaxial planar type
Unit : mm
I Features
• Small series resistance rD. rD = 0.18 Ω (typ.) • Good linearity of C − V curve • Small type package, optimum for down-sizing of equipment
INDICATES CATHODE
0.4 ± 0.15
1
2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Forward current (DC) Junction temperature Storage temperature Symbol VR IF Tj Tstg Rating 12 20 150 −55 to +150 Unit V °C °C
0.4 ± 0.15
1.7 ± 0.1 2.5 ± 0.2
0.9 ± 0.1
mA
0 to 0.