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MA2ZV01 - Schottky Barrier Diodes

Features

  • 1 MA2ZV01 IF  V F 120 25°C Variable Capacitance Diodes CD  VR 100 f = 1 MHz Ta = 25°C 100 VR = 6 V IR  Ta 100 50 Diode capacitance CD (pF) Forward current IF (mA) 80 Ta = 60°C.
  • 40°C 30 20 60 10 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 1 40 5 3 2 0.1 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperatureTa (°C) CD  Ta 1.04 f = 1 MHz VR = 1 V 3V 1.03.

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Datasheet Details

Part number MA2ZV01
Manufacturer Panasonic
File Size 39.29 KB
Description Schottky Barrier Diodes
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Full PDF Text Transcription

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Variable Capacitance Diodes MA2ZV01 Silicon epitaxial planar type Unit : mm For VCO INDICATES CATHODE 0.4 ± 0.15 • Good linearity and large capacitance-ratio in CD  VR relation • Small series resistance rD • S-mini type package, allowing downsizing of equipment and automatic insertion through the taping package 1 2 0.4 ± 0.15 1.7 ± 0.1 2.5 ± 0.2 Parameter Reverse voltage (DC) Junction temperature Storage temperature Symbol VR Tj Tstg Rating 6 150 −55 to +150 Unit V °C °C 0.9 ± 0.1 0 to 0.
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