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MA3D749A - Schottky Barrier Diode

Features

  • 3.2±0.1 15.0±0.5.
  • Low forward voltage VF.
  • High dielectric breakdown voltage: > 5 kV.
  • Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1.
  • Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip 2.54±0.30 e ) Repetitive peak MA3D749 VRRM 40 V c type reverse voltage MA3D749A 45 n d tage. ued Forward current (Average) IF(AV) 5 A le s ntin Non-repetitive peak forward IFSM 9.

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Schottky Barrier Diodes (SBD) MA3D749 (MA7D49), MA3D749A (MA7D49A) Silicon epitaxial planar type (cathode common) For switching mode power supply 9.9±0.3 Unit: mm 4.6±0.2 2.9±0.2 3.0±0.5 ■ Features φ 3.2±0.1 15.0±0.5 • Low forward voltage VF • High dielectric breakdown voltage: > 5 kV • Easy-to-mount, due to its V cut lead end 1.4±0.2 1.6±0.2 2.6±0.1 ■ Absolute Maximum Ratings Ta = 25°C 0.8±0.1 0.55±0.15 / Parameter Symbol Rating Unit 13.7±0.2 4.2±0.2 Solder Dip 2.54±0.30 e ) Repetitive peak MA3D749 VRRM 40 V c type reverse voltage MA3D749A 45 n d tage.
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