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MA3J142E - Silicon epitaxial planar type

Key Features

  • 1 MA3J142E IF  V F 103 105 Switching Diodes IR  V R 1.6 1.4 VF  Ta 102 104 Ta = 150°C Forward current IF (mA) Forward voltage VF (V) Reverse current IR (nA) 1.2 1.0 IF = 100 mA 0.8 0.6 0.4 3 mA 0.2 10 mA 10 103 100°C 1 Ta = 150°C 100°C 25°C.
  • 20°C 102 25°C 10 10.
  • 1 10.
  • 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 0.
  • 40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) IR  Ta.

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Datasheet Details

Part number MA3J142E
Manufacturer Panasonic
File Size 47.63 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3J142E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes MA3J142E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Small S-mini type package contained two elements, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance, Ct 1 3 2 Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double Symbol VR VRM IF IFM IFSM Tj Tstg Rating 80 80 100 150 225 340 500 750 150 −55 to +150 Unit V V mA 0.9 ± 0.