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Switching Diodes
MA3J142E
Silicon epitaxial planar type
Unit : mm
For switching circuits
0.425
2.1 ± 0.1 1.25 ± 0.1 0.425
+ 0.1
2.0 ± 0.2 1.3 ± 0.1 0.65 0.65
• Small S-mini type package contained two elements, allowing highdensity mounting • Short reverse recovery time trr • Small terminal capacitance, Ct
1 3 2
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double
Symbol VR VRM IF IFM IFSM Tj Tstg
Rating 80 80 100 150 225 340 500 750 150 −55 to +150
Unit V V mA
0.9 ± 0.