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Band Switching Diodes
MA3X057
Silicon epitaxial planar type
2.8 − 0.3
+ 0.2
Unit : mm
0.65 ± 0.15
For band switching I Features
• Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.65 ± 0.15
1.5
+ 0.25 − 0.05
0.95
1.9 ± 0.2
2.9 − 0.05
1 3 2
+ 0.2
0.95
1.45 0 to 0.1
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Storage temperature
Symbol VR IF Topr Tstg
Rating 35 100 −25 to +85 −55 to +150
Unit V mA °C °C
0.1 to 0.3 0.4 ± 0.2
0.8
I Absolute Maximum Ratings Ta = 25°C
1.1 − 0.
MA3X057 Datasheet
