Datasheet Summary
Band Switching Diodes
Silicon epitaxial planar type
- 0.3
+ 0.2
Unit : mm
0.65 ± 0.15
For band switching I Features
- Low forward dynamic resistance rf
- Less voltage dependence of diode capacitance CD
- Mini type package, allowing downsizing of equipment and automatic insertion through the taping package
0.65 ± 0.15
+ 0.25
- 0.05
1.9 ± 0.2
- 0.05
1 3 2
+ 0.2
1.45 0 to 0.1
Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature- Storage temperature
Symbol VR IF Topr Tstg
Rating 35 100
- 25 to +85
- 55 to +150
Unit V mA °C °C
0.1 to 0.3 0.4 ±...