Datasheet Summary
Switching Diodes
Silicon epitaxial planar type
- 0.3
+ 0.2
Unit : mm
0.65 ± 0.15
For high voltage switching circuit I Features
- High breakdown voltage: VR = 200 V
- Short reverse recovery time trr
- Small package, allowing automatic mounting
0.65 ± 0.15
- 0.05
+ 0.25
1.9 ± 0.2
- 0.05
1 3 2
+ 0.2
1.45 0 to 0.1
Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current- Junction temperature Storage temperature Note)
- : t = 1 s
VR VRRM IF(AV) IFRM IFSM Tj Tstg
200 250 100 225 500 150
- 55 to +150
V V mA mA mA °C °C
0.1 to 0.3 0.4 ±...