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Switching Diodes
MA3X199
Silicon epitaxial planar type
2.8 − 0.3
+ 0.2
Unit : mm
0.65 ± 0.15
For high voltage switching circuit I Features
• High breakdown voltage: VR = 200 V • Short reverse recovery time trr • Small package, allowing automatic mounting
0.65 ± 0.15
1.5 − 0.05
+ 0.25
0.95
1.9 ± 0.2
2.9 − 0.05
1 3 2
+ 0.2
0.95
1.45 0 to 0.1
Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s
VR VRRM IF(AV) IFRM IFSM Tj Tstg
200 250 100 225 500 150 −55 to +150
V V mA mA mA °C °C
0.1 to 0.3 0.4 ± 0.2
1.1
0.
MA3X199 Datasheet
