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MA3XD21 - Silicon epitaxial planar type

Key Features

  • IF(AV) = 1 A rectification is possible.
  • Low forward voltage VF.
  • Mini type 3-pin package 1 0.40+0.10.
  • 0.05 3 1.50+0.25.
  • 0.05 2.8+0.2.
  • 0.3 0.16+0.10.
  • 0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current.
  • 1 Non-repetitive peak forwardsurge-current.
  • 2 Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj T.

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Datasheet Details

Part number MA3XD21
Manufacturer Panasonic
File Size 69.32 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3XD21 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3XD21 Silicon epitaxial planar type Unit: mm For high frequency rectification s Features • IF(AV) = 1 A rectification is possible • Low forward voltage VF • Mini type 3-pin package 1 0.40+0.10 –0.05 3 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 2 (0.65) (0.95) (0.95) 1.9±0.1 s Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse-voltage Average forward current *1 Non-repetitive peak forwardsurge-current *2 Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 15 15 1 3 125 −55 to +125 Unit V V A A °C °C 10˚ 2.90+0.20 –0.05 1.1+0.2 –0.1 1.1+0.3 –0.1 1: Anode 2: N.C.