Datasheet4U Logo Datasheet4U.com

MA3Z080E - Silicon epitaxial planar type

Key Features

  • 1 MA3Z080D, MA3Z080E IF  V F 1 000 Ta = 25°C 10 Band Switching Diodes CD  VR f = 1 MHz Ta = 25°C IR  T a 100 VR = 33 V 5 3 2 10 1 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 100 Diode capacitance CD (pF) Forward current IF (mA) 10 1 0.5 0.3 0.2 1 0.1 0.1 0.1 0 0.2 0.4 0.6 0.8 1.0 0.01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) rf  IF 1.0 f = 100 MHz Ta = 25°C rf  f 1.0 IF = 2 mA Ta = 25.

📥 Download Datasheet

Datasheet Details

Part number MA3Z080E
Manufacturer Panasonic
File Size 40.93 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3Z080E Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
MA3000 MA3000 ETC
MA3005 MA3005 ETC
MA3006 MA3006 ETC
MA3054 Fast Transient Low Dropout Regulator Major Power Technology
MA3056 Fast Transient Low Dropout Regulator Major Power Technology

Other Datasheets by Panasonic

Part Number Description
MA3Z080D Silicon epitaxial planar type
MA3Z070 Silicon epitaxial planar type
MA3Z551 Silicon epitaxial planar type
MA3Z792 Silicon epitaxial planar type
MA3Z792 Schottky Barrier Diodes (SBD)

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Band Switching Diodes MA3Z080D, MA3Z080E Silicon epitaxial planar type Unit : mm For band switching 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 • Low forward dynamic resistance rf • Less voltage dependence of diode capacitance CD • S-mini type package containing two elements, allowing downsizing of equipment and automatic insertion through the taping package 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Forward current (DC) Operating ambient temperature* Symbol VR IF Topr Tstg Rating 35 100 −25 to +85 −55 to +150 Unit V mA °C °C 0.9 ± 0.