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MA3Z551 - Silicon epitaxial planar type

Key Features

  • 1 MA3Z551 IF  V F 25°C PIN Diodes CD  VR f = 1 MHz Ta = 25°C 120 10 IR  Ta 1 000 VR = 40 V 100 5 Diode capacitance CD (pF) Forward current IF (mA) 100 80 Ta = 60°C 3 2 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 60 1 1 40 0.5 0.3 0.2 20.
  • 40°C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.1 0.01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) 2.

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Datasheet Details

Part number MA3Z551
Manufacturer Panasonic
File Size 39.95 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA3Z551 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 0.65 2.0 ± 0.2 1.3 ± 0.1 1 0.65 3 2 0.2 0.9 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR VRM IF PD Topr Tstg Rating 40 45 100 150 −25 to +85 −55 to +150 Unit V V mA mW °C °C 0.7 ± 0.1 0 to 0.1 0.2 ± 0.