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MA3Z551 Datasheet Silicon Epitaxial Planar Type

Manufacturer: Panasonic

Overview: PIN Diodes MA3Z551 Silicon epitaxial planar type Unit : mm For high-frequency variable resistor attenuator 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 • Small diode capacitance CD • Large variable range of forward dynamic resistance rf • Mini type package, allowing downsizing of equipment and automatic insertion through the taping package and magazine package 0.65 2.0 ± 0.2 1.3 ± 0.1 1 0.65 3 2 0.2 0.9 ± 0.1 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Power dissipation Operating ambient temperature Storage temperature Symbol VR VRM IF PD Topr Tstg Rating 40 45 100 150 −25 to +85 −55 to +150 Unit V V mA mW °C °C 0.7 ± 0.1 0 to 0.1 0.2 ± 0.1 1 : Anode 2 : NC 3 : Cathode EIAJ SC-70 S-Mini Type Package (3-pin) Marking Symbol: MY Internal Connection 1 3 2 I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Diode capacitance Forward dynamic resistance* Symbol IR VF CD rf1 rf2 VR = 40 V IF = 100 mA VR = 15 V, f = 1 MHz IF = 10 µA, f = 100 MHz IF = 10 mA, f = 100 MHz 1 1.05 0.3 2 6 10 Conditions Min Typ Max 100 1.2 0.5 Unit nA V pF kΩ Ω Note) 1 Rated input/output frequency: 100 MHz 2 * : rf measuring instrument: YHP MODEL 4191A RF IMPEDANCE ANALYZER 0.15 − 0.05 + 0.1 0.3 − 0 + 0.

Key Features

  • 1 MA3Z551 IF  V F 25°C PIN Diodes CD  VR f = 1 MHz Ta = 25°C 120 10 IR  Ta 1 000 VR = 40 V 100 5 Diode capacitance CD (pF) Forward current IF (mA) 100 80 Ta = 60°C 3 2 Reverse current IR (nA) 0 4 8 12 16 20 24 28 32 36 40 10 60 1 1 40 0.5 0.3 0.2 20.
  • 40°C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0.1 0.1 0.01 0 20 40 60 80 100 120 140 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (°C) 2.

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