MA3ZD12 - Silicon epitaxial planar type

Panasonic

Key Features

S-mini type 3-pin package.
Allowing to rectify under (IF(AV) = 700 mA) condition.
Low forward rise voltage VF (VF < 0.45 V).
Allowing high-density mounting 0.65 2.0 ± 0.2 1.3 ± 0.1 0.425 1.25 ± 0.1 0.425 1 0.65 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current.
2 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 25 700 2 125.
55 to +125 Unit V V mA A °C °C 0.9 ± 0.1 Non-repetitive peak forward surge.

MA3ZD12 silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA3ZD12
Manufacturer	Panasonic
File Size	40.65 KB
Description	Silicon epitaxial planar type
Datasheet	MA3ZD12 Datasheet

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Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 I Features • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition • Low forward rise voltage VF (VF < 0.45 V) • Allowing high-density mounting 0.65 2.0 ± 0.2 1.3 ± 0.1 0.425 1.25 ± 0.1 0.425 1 0.65 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*2 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 25 700 2 125 −55 to +125 Unit V V mA A °C °C 0.9 ± 0.