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MA4ZD14 - Silicon epitaxial planar type

Key Features

  • S-mini type 4-pin package.
  • Low forward rise voltage VF (VF < 0.4 V).
  • Allowing high-density mounting 2.0 ± 0.1 1.3 ± 0.1 1 2.1 ± 0.1 1.25 ± 0.1 4 2 3 Repetitive peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak 2 forward surge current.
  • VRRM IF IFM IFSM Tj Tstg 20 100 75 300 225 1 0.75 125.
  • 55 to +125 V mA Single Double.
  • 1 Single Double.
  • 1 Single Double.
  • 1 mA 1 : Anode 1 2 : Anode 2 3 : Cathode 2 4 : Catho.

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Datasheet Details

Part number MA4ZD14
Manufacturer Panasonic
File Size 41.65 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA4ZD14 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA4ZD14 Silicon epitaxial planar type Unit : mm For high-speed switching circuits I Features • S-mini type 4-pin package • Low forward rise voltage VF (VF < 0.4 V) • Allowing high-density mounting 2.0 ± 0.1 1.3 ± 0.1 1 2.1 ± 0.1 1.25 ± 0.1 4 2 3 Repetitive peak reverse voltage Forward current (DC) Peak forward current Non-repetitive peak 2 forward surge current* VRRM IF IFM IFSM Tj Tstg 20 100 75 300 225 1 0.