q q
Unit : mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Low forward voltage V F Fast reverse recovery time trr
16.7±0.3
q
High reverse voltage VR
7.5±0.2
ø3.1±0.1
4.2±0.2
1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1
+0.2
14.0±0.5
Solder Dip
4.0
2.54±0.25
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Fast Recovery Diodes (FRD)
MA111
MA649
Silicon planer type (cathode common)
0.7±0.1
For switching s Features
q q
Unit : mm
10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2
Low forward voltage V F Fast reverse recovery time trr
16.7±0.3
q
High reverse voltage VR
7.5±0.2
ø3.1±0.1
4.2±0.2
1.4±0.1 1.3±0.2 0.8±0.1 0.5 -0.1
+0.2
14.0±0.5
Solder Dip
4.0
2.54±0.25
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current Junction temperature Storage temperature
* Sine half wave : 10ms/cycle
5.08±0.
MA649 Datasheet
