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MA6X125 - Silicon epitaxial planar type

Features

  • Four-element contained in one package, allowing high-density mounting 2.8.
  • 0.3 0.65 ± 0.15 6 1.9 ± 0.2 0.95 0.95 + 0.2 1.5.
  • 0.05 1 + 0.25 0.65 ± 0.15 1.45 ± 0.1 0.3.
  • 0.05 + 0.1 2.9.
  • 0.05 + 0.2 5 2 4 3 Peak reverse voltage Forward current (DC).
  • Peak forward current.
  • VRM IF IFM Tj Tstg 40 100 200 150.
  • 55 to +150 V mA mA °C °C Junction temperature Storage temperature Note).
  • 1 : Value for single diode 1 : Cathode 1 2.

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Datasheet preview – MA6X125

Datasheet Details

Part number MA6X125
Manufacturer Panasonic
File Size 54.88 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA6X125 Datasheet
Additional preview pages of the MA6X125 datasheet.

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Other Datasheets by Panasonic
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Full PDF Text Transcription

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Switching Diodes MA6X125 Silicon epitaxial planar type Unit : mm For switching circuits I Features • Four-element contained in one package, allowing high-density mounting 2.8 − 0.3 0.65 ± 0.15 6 1.9 ± 0.2 0.95 0.95 + 0.2 1.5 − 0.05 1 + 0.25 0.65 ± 0.15 1.45 ± 0.1 0.3 − 0.05 + 0.1 2.9 − 0.05 + 0.2 5 2 4 3 Peak reverse voltage Forward current (DC)* Peak forward current* VRM IF IFM Tj Tstg 40 100 200 150 −55 to +150 V mA mA °C °C Junction temperature Storage temperature Note) *1 : Value for single diode 1 : Cathode 1 2 : Anode 2 3 : Cathode 3 Anode 4 0 to 0.1 Reverse voltage (DC) VR 40 V 0.1 to 0.3 0.4 ± 0.2 0.8 Parameter Symbol Rating Unit 1.1 − 0.
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