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MA6X125 - Silicon epitaxial planar type

Key Features

  • Four-element contained in one package, allowing high-density mounting 2.8.
  • 0.3 0.65 ± 0.15 6 1.9 ± 0.2 0.95 0.95 + 0.2 1.5.
  • 0.05 1 + 0.25 0.65 ± 0.15 1.45 ± 0.1 0.3.
  • 0.05 + 0.1 2.9.
  • 0.05 + 0.2 5 2 4 3 Peak reverse voltage Forward current (DC).
  • Peak forward current.
  • VRM IF IFM Tj Tstg 40 100 200 150.
  • 55 to +150 V mA mA °C °C Junction temperature Storage temperature Note).
  • 1 : Value for single diode 1 : Cathode 1 2.

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Datasheet Details

Part number MA6X125
Manufacturer Panasonic
File Size 54.88 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA6X125 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes MA6X125 Silicon epitaxial planar type Unit : mm For switching circuits I Features • Four-element contained in one package, allowing high-density mounting 2.8 − 0.3 0.65 ± 0.15 6 1.9 ± 0.2 0.95 0.95 + 0.2 1.5 − 0.05 1 + 0.25 0.65 ± 0.15 1.45 ± 0.1 0.3 − 0.05 + 0.1 2.9 − 0.05 + 0.2 5 2 4 3 Peak reverse voltage Forward current (DC)* Peak forward current* VRM IF IFM Tj Tstg 40 100 200 150 −55 to +150 V mA mA °C °C Junction temperature Storage temperature Note) *1 : Value for single diode 1 : Cathode 1 2 : Anode 2 3 : Cathode 3 Anode 4 0 to 0.1 Reverse voltage (DC) VR 40 V 0.1 to 0.3 0.4 ± 0.2 0.8 Parameter Symbol Rating Unit 1.1 − 0.