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Switching Diodes
MA6X125
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
• Four-element contained in one package, allowing high-density mounting
2.8 − 0.3 0.65 ± 0.15 6
1.9 ± 0.2 0.95 0.95
+ 0.2
1.5 − 0.05 1
+ 0.25
0.65 ± 0.15
1.45 ± 0.1 0.3 − 0.05
+ 0.1
2.9 − 0.05
+ 0.2
5
2
4
3
Peak reverse voltage Forward current (DC)* Peak forward current*
VRM IF IFM Tj Tstg
40 100 200 150 −55 to +150
V mA mA °C °C
Junction temperature Storage temperature Note) *1 : Value for single diode
1 : Cathode 1 2 : Anode 2 3 : Cathode 3 Anode 4
0 to 0.1
Reverse voltage (DC)
VR
40
V
0.1 to 0.3 0.4 ± 0.2
0.8
Parameter
Symbol
Rating
Unit
1.1 − 0.