0.1
+ 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double.
Single Double.
Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125.
55 to +125 °C °C mA Unit V mA
0.4 ± 0.2
1 : Cathode 1 2 : Anode 2 3 : Cathode 2 4 : Anode 1 Mini Type Package (4-pin)
Marking Symbol: M1P Internal Connection
4 3 1 2
Junction temperature Storage temperature Note).
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Schottky Barrier Diodes (SBD)
MA4X714
Silicon epitaxial planar type
Unit : mm
For switching circuits For wave detection circuit
• Two MA3X704As are contained in one package (Two diodes in a different direction) • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr)
2.9 − 0.05
2.8 − 0.3 0.65 ± 0.15 1.5 − 0.05
+ 0.25
+ 0.2
0.65 ± 0.15
1.9 ± 0.2
0.95
+ 0.2
0.95
0.5
I Features
0.5 R 4 1
+ 0.1
3
0.4 − 0.05
2
0.2 1.1 − 0.1
+ 0.2
I Absolute Maximum Ratings Ta = 25°C
Parameter Reverse voltage (DC) Peak forward current Forward current (DC) Single Double* Single Double* Tj Tstg IF Symbol VR IFM Rating 30 150 110 30 20 125 −55 to +125 °C °C mA Unit V mA
0.4 ± 0.