MA737 - Silicon epitaxial planar type

Panasonic

Key Features

2 1 0.25.
0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current.
1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 60.
40 to +125.
40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0.
0.1 + 0.4 1.2 ± 0.4 Non-repetitive peak forward surge current.
2 Junction temperature Storage temperature 1 : Anode 2 : Cathode New Mini-Power Type Package (2-pin) Marking Symbol: PC Note).
1.

MA737 silicon epitaxial planar type by Panasonic - Datasheet Preview

Datasheet Details

Part number	MA737
Manufacturer	Panasonic
File Size	46.29 KB
Description	Silicon epitaxial planar type
Datasheet	MA737 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA2Q737 Silicon epitaxial planar type Unit : mm For high-frequency rectification 4.4 ± 0.3 0 to 0.05 • Forward current (average) IF(AV): 1.5 A type • Reverse voltage (DC value) VR: 30 V • Allowing automatic insertion with the emboss taping 2.5 ± 0.3 I Features 2 1 0.25 − 0.05 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current*1 Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 30 30 1.5 60 −40 to +125 −40 to +125 Unit V V A A °C °C 1.2 ± 0.4 5.0 − 0.1 + 0.4 1.2 ± 0.