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MA744 - Silicon epitaxial planar type

Key Features

  • Small S-mini type package allowing high-density mounting.
  • Allowing to rectify under (IF(AV) = 200 mA) condition 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current.
  • Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 150.
  • 55 to +150 Unit.

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Datasheet Details

Part number MA744
Manufacturer Panasonic
File Size 43.25 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA744 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diodes (SBD) MA3J744 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification I Features • Small S-mini type package allowing high-density mounting • Allowing to rectify under (IF(AV) = 200 mA) condition 2.1 ± 0.1 0.425 1.25 ± 0.1 0.425 + 0.1 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 1 3 2 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFM IFSM Tj Tstg Rating 30 30 200 300 1 150 −55 to +150 Unit V V mA mA A °C °C 0.9 ± 0.