q Sealed in small glass package (DO-34) q 5mm pitch insertion possible q Low forward rise voltage VF and satisfactory wave detection effi-
ciency q Temperature coefficient of forward characteristic is small. q Extremely low reverse current IR q VR (DC value)= 40V guaranteed
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Junction temperature Storage temperature
Symbol VR VRRM IFM IF Tj Tstg
Rati.
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Schottky Barrier Diodes (SBD)
MA776
Silicon epitaxial planer type
For the switching circuit
s Features
q Sealed in small glass package (DO-34) q 5mm pitch insertion possible q Low forward rise voltage VF and satisfactory wave detection effi-
ciency q Temperature coefficient of forward characteristic is small. q Extremely low reverse current IR q VR (DC value)= 40V guaranteed
s Absolute Maximum Ratings (Ta= 25˚C)
Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Junction temperature Storage temperature
Symbol VR VRRM IFM IF Tj Tstg
Rating 40 40 150 30 125
– 55 to +125
Unit V V
mA mA ˚C ˚C
2SK1606
ø0.45 max.
COLORED BAND INDICATES CATHODE
1
Unit : mm
13 min.
0.2max.
1st Band 2nd Band
2.2±0.3
13 min.
0.2 max.
2
ø1.
MA776 Datasheet
