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MA776 - Schottky Barrier Diodes

Features

  • q Sealed in small glass package (DO-34) q 5mm pitch insertion possible q Low forward rise voltage VF and satisfactory wave detection effi- ciency q Temperature coefficient of forward characteristic is small. q Extremely low reverse current IR q VR (DC value)= 40V guaranteed s Absolute Maximum Ratings (Ta= 25˚C) Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Junction temperature Storage temperature Symbol VR VRRM IFM IF Tj Tstg Rati.

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Datasheet Details

Part number MA776
Manufacturer Panasonic
File Size 30.80 KB
Description Schottky Barrier Diodes
Datasheet download datasheet MA776 Datasheet
Additional preview pages of the MA776 datasheet.

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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA776 Silicon epitaxial planer type For the switching circuit s Features q Sealed in small glass package (DO-34) q 5mm pitch insertion possible q Low forward rise voltage VF and satisfactory wave detection effi- ciency q Temperature coefficient of forward characteristic is small. q Extremely low reverse current IR q VR (DC value)= 40V guaranteed s Absolute Maximum Ratings (Ta= 25˚C) Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward current Junction temperature Storage temperature Symbol VR VRRM IFM IF Tj Tstg Rating 40 40 150 30 125 – 55 to +125 Unit V V mA mA ˚C ˚C 2SK1606 ø0.45 max. COLORED BAND INDICATES CATHODE 1 Unit : mm 13 min. 0.2max. 1st Band 2nd Band 2.2±0.3 13 min. 0.2 max. 2 ø1.
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