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MA786 - Silicon epitaxial planar type

Datasheet Summary

Features

  • Allowing to rectify under (IF(AV) = 100 mA) condition.
  • Optimum for high-frequency rectification because of its short reverse recovery time (trr).
  • Low VF (forward rise voltage), with high rectification efficiency 2.9.
  • 0.05 + 0.2 2.8.
  • 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25.
  • 0.05 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.1 Parameter Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Average forward c.

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Datasheet Details

Part number MA786
Manufacturer Panasonic
File Size 46.37 KB
Description Silicon epitaxial planar type
Datasheet download datasheet MA786 Datasheet
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Full PDF Text Transcription

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Schottky Barrier Diodes (SBD) MA3X786 Silicon epitaxial planar type For super-high speed switching circuit For small current rectification I Features • Allowing to rectify under (IF(AV) = 100 mA) condition • Optimum for high-frequency rectification because of its short reverse recovery time (trr) • Low VF (forward rise voltage), with high rectification efficiency 2.9 − 0.05 + 0.2 2.8 − 0.3 0.65 ± 0.15 1.5 + 0.2 Unit : mm 0.65 ± 0.15 + 0.25 − 0.05 0.95 1.9 ± 0.2 1 3 2 0.95 1.45 0 to 0.
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