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Schottky Barrier Diodes (SBD)
MA3D755 (MA7D55)
Silicon epitaxial planar type (cathode common)
For switching mode power supply
I Features
• Low forward voltage VF • High dielectric breakdown voltage: > 5 kV • Easy-to-mount, due to its V cut lead end • TO-220D-A1 package
I Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
Repetitive peak reverse-voltage
VRRM
60
V
Average forward current
IF(AV)
5
A
Non-repetitive peak forward-
IFSM
90
A
surge-current *
Junction temperature Storage temperature
Tj
−40 to +125
°C
Tstg
−40 to +125
°C
Note) *: Half sine wave; 10 ms/cycle
9.9±0.3
Unit: mm
4.6±0.2 2.9±0.2
3.0±0.5
φ 3.2±0.1
15.0±0.5
13.7±0.2 4.2±0.2
Solder Dip
1.4±0.2 1.6±0.2
0.8±0.1
2.6±0.1 0.55±0.15
2.54±0.30 5.08±0.
MA7D55 Datasheet
