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MAZ5240 - Silicon planar type

Download the MAZ5240 datasheet PDF. This datasheet also covers the MAZ variant, as both devices belong to the same silicon planar type family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Mini power type package (2-pin).
  • Allowing automatic mounting with the emboss taping.
  • Sharp rising performance 4.0 ± 0.2 1.5 ± 0.1 1 2 5.0 ± 0.5 Parameter Average forward current Instanious forward current Total power dissipation.
  • 1 Non-repetitive reverse surge power dissipation.
  • 2 Junction temperature Storage temperature Symbol IF(AV) IFRM Ptot PZSM Tj Tstg Rating 250 250 500 30 125.
  • 55 to +200 Unit mA mA mW W °C °C 1.5 ± 0.2 0.4 ± 0.2 1 : Anode.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MAZ-5000.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
MAZ2XXX SILICON PLANAR TYPE Panasonic Semiconductor
MAZ30330 Silicon planar type Panasonic Semiconductor
MAZD0xx (MAZDxxx) Silicon planar type Panasonic Semiconductor
MAZD100 (MAZDxxx) Silicon planar type Panasonic Semiconductor
MAZD1xx (MAZDxxx) Silicon planar type Panasonic Semiconductor

Other Datasheets by Panasonic

Part Number Description
MAZ5200 Silicon planar type
MAZ5220 Silicon planar type
MAZ5000 Silicon planar type
MAZ5047 Silicon planar type
MAZ5051 Silicon planar type

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Zener Diodes MAZ5000 Series Silicon planar type Unit : mm For stabilization of power supply 4.0 ± 0.5 3.0 ± 0.2 I Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance 4.0 ± 0.2 1.5 ± 0.1 1 2 5.0 ± 0.5 Parameter Average forward current Instanious forward current Total power dissipation*1 Non-repetitive reverse surge power dissipation*2 Junction temperature Storage temperature Symbol IF(AV) IFRM Ptot PZSM Tj Tstg Rating 250 250 500 30 125 −55 to +200 Unit mA mA mW W °C °C 1.5 ± 0.2 0.4 ± 0.