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MIP3E40MY - Silicon MOSFET

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MIP3E40MY MOS (IPD) ■ • (MIP2ExD • • ■ • ■ 50% ) VD 700 VC 8 ID 1.5 IDP 2.3 IC 0.1 Tch 150 Tstg −55 ∼ +150 V V A A A °C °C ■ Control ■ • TO-220-A2 • 1: Control 2: Source 3: Drain ■ : MIP3E40MY Drain Max. duty clock SQ RQ SQ RQ MOSFET : 2010 3 SLB00057BJD Source 1 MIP3E40MY ■ TC = 25°C ± 3°C PWM / ) *: fOSC VC = VC(CNT) − 0.2 V, VD = 5 V MAXDC VC = VC(CNT) − 0.2 V, VD = 5 V * GPWM VC = VC(CNT) IC(SB)1 IC(SB)2 IC(OP) VC(ON) VC(OFF) ∆VC VC(CLP) TSW / TTIM fTIM IC(CHG) VC(CNT) * ∆VC(CNT) VD(MIN) VC < VC(ON) , VD = 5 V VC > VC(CNT) , VD = 5 V VC = VC(CNT) − 0.2 V, VD = 5 V VD = 5 V VD = 5 V VD = 5 V IC = 1 mA, VD = 5 V VC = 0 V, VD = 40 V VC = 5 V, VD = 40 V VD = 5 V VD = 5 V * * * * ILIMIT ton(BLK) td(OCL) TOTP VC reset RDS(on) IDSS ID = 0.3 A VDS = 650 V, VC = 6.
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