Panasonic MIP502
Silicon MOS IC
FEATURES
q MIP501 3.8±0.2 10.8±0.2 7.5±0.2 4.5±0.2 Unit : mm High breakdown voltage, N-Ch MOS FET output (V DSS > 40V Ron < 0.5 Ω) Over-current-protection function built-in Reset function built-in 16.0±1.0 90° 0.65±0.1 0.85±0.1 q q q 2.5±0.1 1.0±0.1 0.65±0.1 0.7±0.1 0.8C 0.8C Direct drive possible by the logic circuit sAPPLICATIONS
q Lamp drive 2.5±0.2 0.8C 0.5±0.1 2.5±0.2 0.4±0.1 2.05±0.2 sABSOLUTE MAXIMUM RATINGS
(Ta= 25˚C) Parameter Output breakdown voltage Output peak current Output current Input voltage Input current Allowable power dissipation Junction temperature Storage temperature Operating temperature MIP501 MIP502 Symbol VDSS IOP IOA VIN IIN PD Tj Tstg Topr Rating 40 5 1.7 – 0.5 to 6 ±10 1.5 1* 150 – 55 to +150 – 40 to + 85 Unit V A V mA W ˚C ˚C ˚C A 1 2 3 1 : IN 2 : Drain 3 : Source MT3 Type Package 4.0±0.2 MIP502 5.0±0.2 Unit : mm 0.45 -0.1 1.27 1.27 +0.15 13.5±0.5 0.7±0.1 0.7±0.2 8.0±0.2 0.45 -0.1 +0.15 * The value at mounted on PCB (glass epoxy resin: 100 ×100mm). (For...