Panasonic NP0G3D2
Silicon PNP(NPN) epitaxial planar transistor
| Part No. | NP0G3D2 |
|---|---|
| Datasheet | NP0G3D2 Download |
| Manufacturer |  Panasonic |
| Description | Silicon PNP(NPN) epitaxial planar transistor |
| Buy | Stock & Price |
FEATURES
0 to 0.02 1 2 3 0.10●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Tr1 Collector to base voltage Collector to emitter voltage Collector current Tr2 Collector to base voltage Collector to emitter voltage Collector current Overall Total power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO IC VCBO VCEO IC PT Tj Tstg Rating −50 −50 −80 50 50 80 125 125 −55 to +125 Unit V V mA V V mA mW °C °C 1: Base (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) 0.37+0.03 -0.02 4: Collector (Tr2) 5: Emitter (Tr1) 6: Collector (Tr1) SSSMini6-F1 Package Marking Symbol: 3B Internal Connection 6 Tr1 Tr2 5 4 Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm 1 2 3 (0.10) Publication date: July 2002 SJH00051AED 1 NP0G3D2●
ELECTRICAL CHARACTERISTICS
Ta = 25°C ± 3°C● Tr1 Parameter Collector to base voltage Collector to emittter voltage Collector cutoff current Symbol VCBO VCEO ICBO ICEO Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Hig...
