Panasonic ON1113
This device is designed be disregarded radiation.FEATURES
● Highly precise position detection: 0.3 mm● Wide gap between emitting and detecting elements, suitable for thick plate detection
● Fast response: tr , tf = 6 µs (typ.)
● Small output current variation against change in temperature 8.5 8.8 min. A' (10.1) 2-φ3.2±0.2 4- 0.45 2-2.0 (2.54) SEC. A-A'
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Input (Light Reverse voltage Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation *2 Temperature Operating ambient temperature Storage temperature emitting diode) Forward current Symbol VR IF PD VCEO VECO IC PC Topr Tstg Rating 3 50 75 30 5 20 100 −25 to +85 −30 to +100 Unit V mA mW V V mA mW °C °C 1: Anode 2: Cathode 3: Collector 4: Emitter 1 4 PISTR104-012 Package (Note) 1. Tolerance unless otherwise specified is ±0.3 2. ( ) Dimension is reference 2 3 Note) *1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C. *2: Output power derating ratio is 1.34 mW/°C at Ta ≥ 25°C.