Panasonic ON1120
The two elements are arranged so as to face each other, and objects passing between them are detected. The case has no openings, so the photosensor is not easily susceptible to output attenuation resulting from dust or particles 19.0±0.35 10.0±0.3 A (2.0) 6.2±0.25 Unit: mm 14.0±0.2 3.0±0.2 ■ Features 2-C0.5 A' 3.0 min.| Part No. | ON1120 |
|---|---|
| Datasheet | ON1120 Download |
| Manufacturer |  Panasonic |
| Description | Transmissive Photosensors |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Input (Light Reverse voltage Power dissipation *1 Output (Photo Collector-emitter voltage transistor) (Base open) Emitter-collector voltage (Base open) Collector current Collector power dissipation Temperature Storage temperature *2 Symbol VR IF PD VCEO VECO IC PC T opr Tstg Rating 3 50 75 20 5 20 100 −5 to +60 −15 to +65 Unit V mA mW V V mA mW °C °C 1: Anode 2: Cathode 3: Collector 1 4 4: Emitter PISTR104-014 Package (Note) ( ) Dimension is reference emitting diode) Forward current Operating ambient temperature Note) *1: Input power derating ratio is 1.88 mW/°C at Ta ≥ 25°C. 2: * Output power derating ratio is 2.50 mW/°C at Ta ≥ 25°C.● Electrical-Optical Characteristics Ta = 25°C ± 3°C Parameter Input Forward voltage characteristics Reverse current Output Collector-emitter cutoff current characteristics (Base open) Collector-emitter capacitance Transfer Collector current Rise time * Fall time * Symbol VF IR ICEO CC IC tr tf IF = 50 mA VR =...
