Panasonic PN108CL
Silicon NPN Phototransistor
| Part No. | PN108CL |
|---|---|
| Datasheet | PN108CL Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Phototransistor |
| Buy | Stock & Price |
FEATURES
High sensitivity : ICE(L) = 3.5 mA (min.) (at L = 500 lx) Wide directional sensitivity for easy use Fast response : tr = 5 µs (typ.) Signal mixing capability using base pin 15 0. 1. 3.0±0.3 12.7 min. 2.0±0.1 0.2±0.05 3-ø0.45±0.05 2.54±0.25 1. 0± 0. 15 Small size (low in height) package 0± 3˚ 45±ABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 3 5 20 100 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C ø5.75 max. ø4.2±0.2 3 1 2 1: Emitter 2: Base 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) *3 Conditions VCE = 10V VCE =...
