Panasonic PN115
Silicon NPN Phototransistor
| Part No. | PN115 |
|---|---|
| Datasheet | PN115 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Phototransistor |
| Buy | Stock & Price |
FEATURES
High sensitivity Wide directional sensitivity, matched to GaAs LEDs : θ = 35 deg. (typ.) Fast response : tr = 5 µs (typ.) Side-view type package 4.5±0.3 Not soldered ø3.5±0.2 4.8±0.3 2.4 2.4 4.2±0.3 2.3 1.9 2.0 12.5 min. 10.0 min. 3-0.45±0.2 0.45±0.2ABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C) Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VCBO VECO VEBO IC PC Topr Tstg Ratings 20 30 5 5 10 100 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 1 2 3 1.27 1.27 1.2 1: Emitter 2: Collector 3: Base Photodetectors Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time Collector saturation voltage *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 100 VCE = 10V Measured from the...
