Panasonic PN155
Silicon NPN Phototransistor
| Part No. | PN155 |
|---|---|
| Datasheet | PN155 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Phototransistor |
| Buy | Stock & Price |
FEATURES
High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Low dark current 12.8 min. 3.9±0.25 4.5±0.15 3.5±0.15 Flat type plastic package (2.95) 2-1.2±0.3 2-0.45±0.15 1 2 2.54±0.2 0.45±0.2ABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 100 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 Symbol ICEO ICE(L) λP θ tr, tf*2 VCE(sat) *1 *1 Conditions VCE = 10V VCE = 10V, L = 100 lx VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω ICE(L) = 1mA, L = 1000 lx min 0.05 typ 0.01 0.2 800 70 4 0.2 max 1 Unit µA mA nm deg.
