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Phototransistors
PNA1601M (PN166)
Silicon NPN Phototransistor
For optical control systems Features
High sensitivity Wide spectral sensitivity, suited for detecting various kinds of LEDs
12.5±1.0 0.8 0.5 max. Gate the rest
Unit : mm
2.6±0.2 C0.5 0.8 R0.55 1.4±0.2 1.2±0.2 (0.4)
2.0 0.7
2.5±0.2 1.7
Ultraminiature, thin side-view type package
2-0.7
2-0.45
0.15
2
1 2.0
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Collector to emitter voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO IC PC Topr Tstg Ratings 20 20 50 –25 to +65 –30 to +85 Unit V mA mW ˚C ˚C
1: Collector 2: Emitter
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