Panasonic PNA1401LF
Silicon NPN Phototransistors
| Part No. | PNA1401LF |
|---|---|
| Datasheet | PNA1401LF Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Phototransistors |
| Buy | Stock & Price |
FEATURES
Flat window design which is suited to optical systems Low dark current : ICEO = 5 nA (typ.) Fast response : tr, tf = 3 µs (typ.) Wide directional sensitivity Base pin for easy circuit design (PNZ102F) 4.5±0.2 12.7 min. 2-ø0.45±0.05 2.54±0.25 0 0± 1. .2 .1 5 3˚ 45± 1. 0± 0 2 1ABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C) ø5.75 max. Parameter Collector to emitter voltage Collector to base voltage Emitter to collector voltage Emitter to base voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature * Symbol VCEO VCBO* VECO VEBO* IC PC Topr Tstg Ratings 30 40 5 5 50 150 –25 to +85 –30 to +100 Unit V V V V mA mW ˚C ˚C 4.5±0.2 1: Emitter 2: Collector PNZ102F ø4.6±0.15 Unit : mm Glass window 12.7 min. 3-ø0.45±0.05 2.54±0.25 PNZ102F only 1. 0 0± .2 5 45± 0± 0. 1 3˚ 1. 3 2 1 1: Emitter 2: Base 3: Collector ø5.75 max. 1 PNA1401LF, PNZ102F Phototransistors Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak...
