Panasonic PNA2W01M
Darlington Phototransistor
| Part No. | PNA2W01M |
|---|---|
| Datasheet | PNA2W01M Download |
| Manufacturer |  Panasonic |
| Description | Darlington Phototransistor |
| Buy | Stock & Price |
FEATURES
● High sensitivity● Easy to combine with red and infrared light emitting diodes
● Small size designed for easier mounting to printed circuit board 0.5±0.1 1 10.0 min. 3.2±0.3 φ1.8 3.2±0.3 10.0 min. 2 ° (0.7) (0.7) 0.15 1.05±0.1 R0.9 s
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Rating 20 5 30 100 −25 to +85 −30 to +100 Unit V V mA mW °C °C 2.8±0.2 0.85±0.15 s Electro-Optical Characteristics Ta = 25°C Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage Symbol ICEO ICE(L) λP θ tr , tf *2 VCE(sat) VCE = 10 V VCE = 10 V, L = 2 lx VCE = 10 V Measured from the optical axis to the half power point VCC = 10 V, ICE(L) = 5 mA, RL = 100 Ω ICE(L) = 1 mA, L = 100 lx *1 *1 Conditions Min Typ 0.1 Max 0.5 2.2±0.15 1.8 2.