Panasonic UN1223
Silicon NPN epitaxial planer transistor
| Part No. | UN1223 |
|---|---|
| Datasheet | UN1223 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN epitaxial planer transistor |
| Buy | Stock & Price |
FEATURES
q q 0.85 s Resistance by Part Number q q q q 0.55±0.1 UN1221 UN1222 UN1223 UN1224 (R1) 2.2kΩ 4.7kΩ 10kΩ 2.2kΩ (R2) 2.2kΩ 4.7kΩ 10kΩ 10kΩ (Ta=25˚C) Ratings 50 50 500 600 150 –55 to +150 Unit V V mA mW ˚C ˚C 3 2.5 sABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection R1 C B R2 E sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current UN1221 UN1222 UN1223/1224 (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL fT R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω VCB = 10V, IE = –50mA, f = 200MHz (–30%) 200 2.2 4.7 10 R1/R2 0.8 1.0 0.22 1.2 (+30%) kΩ 4.9 0.2 50 50 40...
