Panasonic UN1231A
Silicon NPN epitaxial planer transistor
| Part No. | UN1231A |
|---|---|
| Datasheet | UN1231A Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN epitaxial planer transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage UN1231 UN1231A Symbol VCBO VCEO IC ICP PT* Tj Tstg (Ta=25˚C) Ratings 20 60 20 50 0.7 1.5 1.0 150 –55 to +150 Unit 3 2 1 2.5 2.5 V UN1231 Collector to emitter voltage UN1231A Collector current Peak collector current Total power dissipation Junction temperature Storage temperature 1:Base 2:Collector 3:Emitter M Type Mold Package V A A W ˚C ˚C R1(1kΩ) Internal Connection 1.25±0.05 C B R2 (47kΩ) * Printed circuit board: Copper foil area of 1cm2 or more and thickness of 1.7mm for the collector portion. E sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current Collector to base voltage UN1231 UN1231A UN1231 UN1231A (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) R1 R1/R2 Conditions VCB = 15V, IE = 0 VCE = 15V, IB = 0 VEB = 14V, IC = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 VCE = 10V, IC = 150mA* IC = 100mA, IB = 5mA* 0.7 1 0.021 *Pulse measurement 20 60 20 50 800 2100 0.4 1.3 V kΩ min typ max 1 10 0.5 Unit µA µA mA V Collector to emitter voltage 4.1±0.2 q 2.4±0.2 2.0±0.2 q High forward current transfer ratio hFE.