Panasonic UN4221
Silicon NPN epitaxial planer transistor
ABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg 1 : Emitter 2 : Collector 3 : Base New S Type Package Internal Connection R1 2.0±0.2 s Resistance by Part Number 15.6±0.5 sFEATURES
C B R2 E sELECTRICAL CHARACTERISTICS
Parameter Collector cutoff current Emitter cutoff current UN4221 UN4222 UN4223/4224 (Ta=25˚C) Symbol ICBO ICEO IEBO VCBO VCEO hFE VCE(sat) VOH VOL R1 Conditions VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCE = 10V, IC = 100mA IC = 100mA, IB = 5mA VCC = 5V, VB = 0.5V, RL = 500Ω VCC = 5V, VB = 3.5V, RL = 500Ω 2.2 (–30%) 4.7 10 R1/R2 0.8 0.17 1.0 0.22 1.2 0.27 (+30%) kΩ 4.9 0.2 50 50 40 50 60 0.25 V V V min typ max 1 1 5 2 1 V V mA Unit µA µA Collector to base voltage Collector to emitter voltage Forward current transfer ratio UN4221 UN4222 UN4223/4224 Collector to emitter sat...