Suitable for high-density mounting downsizing of the equipment.
Contribute to low power consumption.
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
VCBO VCEO
IC PT Tj Tstg
50 50 80 100 125.
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Transistors with built-in Resistor
UNR32A9
Silicon NPN epitaxial planar type
For digital circuits
■ Features • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature
VCBO VCEO
IC PT Tj Tstg
50 50 80 100 125 −55 to +125
Unit V V mA mW °C °C
0.33+–00..0025 3
0.23+–00..0025
12
(0.40) (0.40) 0.80±0.05 1.20±0.05
5°
0.15 min.
0.80±0.05 1.20±0.05
5°
Unit: mm
0.10+–00..0025
0.15 min.
0 to 0.01 0.52±0.03
0.15 max.
UNR32A9 Datasheet
