Panasonic XN01601
Silicon PNP epitaxial planer transistor
FEATURES
G G 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 4 5 1.50+0.25 –0.05 2.8+0.2 –0.3 0.16+0.10 –0.06 Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2 0.30+0.10 –0.05 1 (0.65) 1.1+0.2 –0.1 G 2SB0709A(2SB709A) + 2SD0601A(2SD601A) IABSOLUTE MAXIMUM RATINGS
Parameter Collector to base voltage Collector to emitter voltage Tr1 Emitter to base voltage Collector current Peak collector current Collector to base voltage Collector to emitter voltage Tr2 Emitter to base voltage Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP VCBO VCEO VEBO IC ICP PT Tj Tstg (Ta=25˚C) Ratings –60 –50 –7 –100 –200 60 50 7 100 200 300 150 –55 to +150 Unit V V V mA mA V V V mA mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Collector (Tr2) 3 : Base (Tr2) 4 : Emitter 5 : Base (Tr1) EIAJ : SC–74A Mini5-G1 Pakage Marking Symbol: 7S Internal Connection 5 4 3 2 Tr1 1 Tr2 Note) The Part number in the Parenthesis shows conventional part number.