Panasonic XN09D58
Silicon PNP epitaxial planar type
FEATURES
● Two elements incorporated into one package (Tr + SBD)● Reduction of the mounting area and assembly cost by one half
● Low collector-emitter saturation voltage VCE(sat) 0.50+0.10 –0.05 0.30+0.10 –0.05 6 5 4 1.50+0.25 –0.05 2.8+0.2 –0.3 Unit: mm 0.16+0.10 –0.06 1 2 3 (0.65)
● Basic Part Number
● XN9D57 + MA3ZD12 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Display at No.1 lead 10°
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ABSOLUTE MAXIMUM RATINGS
Ta = 25°C Parameter Tr Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current SBD Reverse voltage Repetitive peak reverse voltage Forward current (Average) Non-repetitive peak forward surge current Overall Total power dissipation * Junction temperature Storage temperature PT Tj Tstg 600 125 −55 to +125 mW °C °C Symbol VCBO VCEO VEBO IC ICP VR VRRM IF(AV) IFSM Rating −15 −15 −5 −2.5 −10 20 25 700 2 Unit V V V A A V V mA A 1.1+0.2 –0.1 1: Emitter 2: Base 3: Anode 0 to 0.1 4: Collecto...