XN0NE92 - Silicon P-channel MOSFET

Datasheet Summary

Features

s.
Two elements incorporated into one package.
Reduction of the mounting area and assembly cost by one half.
High-speed switching, low on resistance.
Absolute Maximum Ratings Ta = 25°C FET SBD Parameter Symbol Rating Drain-source surrender voltage VDSS.
12 Gate-source surrender voltage VGSS ±15 Drain current ID.
1.2 Peak drain current IDP.
3 Total power dissipation.
PT 600 Channel temperature Tch 125 Storage tempera.

Panasonic

📥 Download Datasheet

Datasheet Details

Part number	XN0NE92
Manufacturer	Panasonic
File Size	169.77 KB
Description	Silicon P-channel MOSFET
Datasheet	XN0NE92 Datasheet
Additional preview pages of the XN0NE92 datasheet.

📁 Similar Datasheet

XN01110 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN01112 - Silicon PNP Transistor (Panasonic Semiconductor)
XN01114 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN01119 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)
XN01210 - Silicon NPN Transistor (Panasonic Semiconductor)
XN01211 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN01212 - Silicon NPN Transistor (Panasonic Semiconductor)
XN01215 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
XN0121E - Silicon NPN Transistor (Panasonic Semiconductor)
XN01401 - Silicon PNP epitaxial planer transistor (Panasonic Semiconductor)

Other Datasheets by Panasonic

Full PDF Text Transcription

▶ Click to expand full text

Plhtetap:s//epvaisnitafsoollnioc.wicno.gjp/UsReLmiacboonu/tel-iatnedsetxi.nhftormlmation.DisMcaionnttiennuaendce/ This product complies with the RoHS Directive (EU 2002/95/EC).

Published: Jan 30, 2019 |