Panasonic XN0NE92
Silicon P-channel MOSFET
| Part No. | XN0NE92 |
|---|---|
| Datasheet | XN0NE92 Download |
| Manufacturer |  Panasonic |
| Description | Silicon P-channel MOSFET |
| Buy | Stock & Price |
FEATURES
● Two elements incorporated into one package● Reduction of the mounting area and assembly cost by one half
● High-speed switching, low on resistance
●
ABSOLUTE MAXIMUM RATINGS
Ta = 25°C FET SBD Parameter Symbol Rating Drain-source surrender voltage VDSS −12 Gate-source surrender voltage VGSS ±15 Drain current ID −1.2 Peak drain current IDP −3 Total power dissipation * PT 600 Channel temperature Tch 125 Storage temperature Tstg −55 to +125 Reverse voltage VR 20 Repetitive peak reverse voltage VRRM 25 Forward current (Average) IF(AV) 700 Non-repetitive peak IFSM 2 forward surge current Unit V V A A mW °C °C V V mA A Note) *: Measuri
