Panasonic XN1D873
Silicon N-channel junction FET
| Part No. | XN1D873 |
|---|---|
| Datasheet | XN1D873 Download |
| Manufacturer |  Panasonic |
| Description | Silicon N-channel junction FET |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Parameter Rating Gate to drain voltage of Drain current element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings –50 30 10 300 150 –55 to +150 Unit V mA mA mW ˚C ˚C 1 : Gate (Tr1) 2 : Gate (Tr2) 3 : Source (Tr2) 0 to 0.1 2SK1103 × 2 elements 0.1 to 0.3 4 : Drain 5 : Source (Tr1) EIAJ : SC–74A Mini Type Pakage (5–pin) Marking Symbol: OC Internal Connection 5 4 3 2 FET 1 1 FET 2 sELECTRICAL CHARACTERISTICS
Parameter Drain current Drain current Gate cutoff current Gate to source cutoff voltage Mutual conductance Drain ON resistance Common source short-circuit input capacitance Common source reverse transfer capacitance Common source short-circuit output capacitance (Ta=25˚C) Symbol VGDS IDSS IGSS VGSC gm RDS(on) Ciss Crss Coss Conditions IG = –10µA, VDS = 0 VDS = 10V, VGS = 0 VGS = –30V, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS...