Panasonic XN4216
Silicon NPN epitaxial planer transistor
XN4216 Specifications
- Max Collector Current : 100mA
- Terminals : 6
- Collector Emitter Voltage : 50V
- Max Power Dissipation : 300mW
Source:
Octopart
| Part No. | XN4216 |
|---|---|
| Datasheet | XN4216 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN epitaxial planer transistor |
| Buy | Stock & Price |
ABSOLUTE MAXIMUM RATINGS
Parameter Rating of Collector to emitter voltage element Collector current Total power dissipation Overall Junction temperature Storage temperature Collector to base voltage Symbol VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings 50 50 100 300 150 –55 to +150 Unit V V mA mW ˚C ˚C 1 : Collector (Tr1) 2 : Base (Tr2) 3 : Emitter (Tr2) 4 : Collector (Tr2) 5 : Base (Tr1) 6 : Emitter (Tr1) EIAJ : SC–74 Mini Type Package (6–pin) Marking Symbol: 8U Internal Connection 6 5 4 Tr1 1 2 3 Tr2 sELECTRICAL CHARACTERISTICS
Parameter Collector to base voltage Collector to emitter voltage Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Output voltage high level Output voltage low level Transition frequency Input resistance (Ta=25˚C) Symbol VCBO VCEO ICBO ICEO IEBO hFE VCE(sat) VOH VOL fT R1 Conditions IC = 10µA, IE = 0 IC = 2mA, IB = 0 VCB = 50V, IE = 0 VCE = 50V, IB = 0 VEB = 6V, IC = 0 VCE = 10V, IC = 5mA IC = 10mA, IB = 0.3mA VCC = 5V, VB = 0.5V, RL = 1kΩ VCC = 5V, VB = 2.5V, RL = 1kΩ VCB = 10V, IE = –2mA, f = 200MHz –30% 150 4.7 +30% 4.9 0.2 160 min 50 50 0.