Panasonic XP1D873
Silicon N-channel junction FET
| Part No. | XP1D873 |
|---|---|
| Datasheet | XP1D873 Download |
| Manufacturer |  Panasonic |
| Description | Silicon N-channel junction FET |
| Buy | Stock & Price |
FEATURES
q q q 0.9± 0.1 s Basic Part Number of Element q sABSOLUTE MAXIMUM RATINGS
Parameter Gate to drain voltage Rating Drain current of element Gate current Total power dissipation Overall Channel temperature Storage temperature Symbol VGDS ID IG PT Tch Tstg (Ta=25˚C) Ratings –50 30 10 150 150 –55 to +150 Unit V mA mA mW ˚C ˚C 1 : Source (FET1) 2 : Drain (FET1, 2) 3 : Source (FET2) 0 to 0.1 2SK1103 × 2 elements 0.7±0.1 0.2 Two elements incorporated into one package. (Drain-coupled FETs) Reduction of the mounting area and assembly cost by one half. Low-frequency and low-noise J-FET. 2.0±0.1 1 2 3 5 0.65 4 0.2±0.1 4 : Gate (FET2) 5 : Gate (FET1) EIAJ : SC–88A S–Mini Type Package (5–pin) Marking Symbol: OC Internal Connection 1 2 3 4 FET 1 5 FET 2 sELECTRICAL CHARACTERISTICS
Parameter Drain voltage Drain current Gate cutoff current Gate to source cutoff voltage Mutual conductance Drain ON resistance Common source short-circuit input capacitance Common source reverse transfer capacita...