Panasonic XP8081
Silicon NPN epitaxial planer transistor
FEATURES
1 2 3 6 5 4 0.9±0.1 q 2SK1103+UN1213 (transistors with built-in resistor) 0.7±0.1 0 to 0.1 0.2±0.1 sABSOLUTE MAXIMUM RATINGS
Parameter Gate to drain voltage Tr1 Drain current Gate current Collector to base voltage Tr2 Collector to emitter voltage Collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VGDS ID IG VCBO VCEO IC PT Tj Tstg (Ta=25˚C) Ratings –50 20 10 50 50 100 150 150 –55 to +150 Unit V mA mA V V mA mW ˚C ˚C 1 : Drain (Tr1) 4 : Emitter (Tr2) 2 : Source (Tr1) 5 : Base (Tr2) 3 : Collector (Tr2) 6 : Gate (Tr1) EIAJ : SC–88 S–Mini Type Package (6–pin) Marking Symbol: 9Z Internal Connection 1 2 3 Tr1 6 5 4 Tr2 0.12 –0.02 s Basic Part Number of Element 0.2 +0.05 1 Composite Transistors XP8081 (Ta=25˚C) Symbol VGDS IDSS IGSS VGSC gm RDS(on) Ciss Crss Coss Conditions IG = –10µA, VDS = 0 VDS = 10V, VGS = 0 VGS = –30V, VDS = 0 VDS = 10V, ID = 10µA VDS = 10V, ID = 1mA, f = 1kHz VDS = 10mV, VGS = 0 VDS = 10V, VGS = 0, f = 1MHz VDS =...