Panasonic Z123
Silicon NPN Phototransistor
| Part No. | Z123 |
|---|---|
| Datasheet | Z123 Download |
| Manufacturer |  Panasonic |
| Description | Silicon NPN Phototransistor |
| Buy | Stock & Price |
FEATURES
High sensitivity Low dark current Fast response : tr = 3.5 µs (typ.) Small size (ø 3) ceramic package ø0.3±0.05 ø0.45±0.05 0.9±0.15ABSOLUTE MAXIMUM RATINGS
(Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 20 5 10 50 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 2 1 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Rise time Fall time *1 *2 Symbol ICEO ICE(L) λP θ tr*2 tf*2 VCE = 10V Conditions VCE = 10V, L = 1000 lx*1 VCE = 10V Measured from the optical axis to the half power point VCC = 10V, ICE(L) = 1mA, RL = 100Ω min 400 typ 1 800 30 3.5 5 max 100 700 Unit nA µA nm deg. µs µs Measurements were made using a tungsten lamp (color temperature T = 2856K) as a light source. Switching time measurement ci...