Datasheet Summary
Power Transistors
2SB1172, 2SB1172A
Silicon PNP epitaxial planar type
For low-frequency power amplification plementary to 2SD1742, 2SD742A
- Features
- High forward current transfer ratio hFE which has satisfactory linearity
- Low collector-emitter saturation voltage VCE(sat)
- I type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment
7.0±0.3 3.0±0.2 2.0±0.2 3.5±0.2
Unit: mm
0˚ to 0.15˚
2.5±0.2
12.6±0.3 7.2±0.3
1.1±0.1
Parameter Collector-base voltage (Emitter open) 2SB1172 2SB1172A
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Ta = 25°C
Rating
- 60
- 80
- 60
- 80
- 5
- 3
- 5 15 1.3 150
- 55 to +150
Unit V
1.0±0.2
0.75±0.1...
