Datasheet Summary
Power Transistors
Silicon PNP epitaxial planar type
For power amplification
Unit: mm
4.6±0.2 s Features q q q
φ3.2±0.1
9.9±0.3
2.9±0.2
4.1±0.2 8.0±0.2 Solder Dip
High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings
- 60
- 60
- 6
- 6
- 3
- 1 40 2 150
- 55 to +150 Unit V V V A A A W ˚C ˚C
15.0±0.3
3.0±0.2
13.7- 0.2 s...